Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-09-04
2007-09-04
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000
Reexamination Certificate
active
10861170
ABSTRACT:
Computational models of a patterning process are described. Any one of these computational models can be implemented as computer-readable program code embodied in computer-readable media. The embodiments described herein explain techniques that can be used to adjust parameters of these models according to measurements, as well as how predictions made from these models can be used to correct lithography data. Corrected lithography data can be used to manufacture a device, such as an integrated circuit.
REFERENCES:
patent: 5308991 (1994-05-01), Kaplan
patent: 5528508 (1996-06-01), Russell et al.
patent: 5573890 (1996-11-01), Spence
patent: 5705301 (1998-01-01), Garza et al.
patent: 5858580 (1999-01-01), Wang et al.
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5888675 (1999-03-01), Moore et al.
patent: 5978085 (1999-11-01), Smith et al.
patent: 6048651 (2000-04-01), Brunner et al.
patent: 6091486 (2000-07-01), Kirk
patent: 6130747 (2000-10-01), Nomura et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6303251 (2001-10-01), Mukai et al.
patent: 6311319 (2001-10-01), Tu et al.
patent: 6356345 (2002-03-01), McArthur et al.
patent: 6396569 (2002-05-01), Zheng et al.
patent: 6403477 (2002-06-01), Tounai
patent: 6413683 (2002-07-01), Liebmann et al.
patent: 6430737 (2002-08-01), Cobb et al.
patent: 6444373 (2002-09-01), Subramanian et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6470489 (2002-10-01), Chang et al.
patent: 6529623 (2003-03-01), Kent
patent: 6532585 (2003-03-01), Petranovic et al.
patent: 6553559 (2003-04-01), Liebmann et al.
patent: 6584609 (2003-06-01), Pierrat et al.
patent: 6646729 (2003-11-01), van der Laan et al.
patent: 6686100 (2004-02-01), Martin et al.
patent: 2002/0088951 (2002-07-01), Chen
patent: 2002/0091986 (2002-07-01), Ferguson et al.
patent: 2002/0138810 (2002-09-01), Lavin et al.
patent: 2003/0003385 (2003-01-01), Martin
patent: 2003/0088847 (2003-05-01), Chang et al.
patent: 2003/0098970 (2003-05-01), Chen
patent: 2003/0121021 (2003-06-01), Liu et al.
patent: 2003/0192013 (2003-10-01), Cote et al.
patent: 2003/0192025 (2003-10-01), Liu
patent: 2004/0015794 (2004-01-01), Kotani et al.
patent: 2375403 (2003-11-01), None
“Correcting Design Data for Manufacture,” U.S. Appl. No. 10/860,852, filed Jun. 4, 2004, inventors: Vishnu Kamat.
“Method of Characterizing Flare,” Invarium, Inc. U.S. Appl. No. 10/860,853, filed Jun. 4, 2004, inventors: Bo Wu, Abdurrahman Sezginer.
“Method for Characterization of the Illuminator in a Lithographic System,” U.S. Appl. No. 10/960,357, filed Oct. 6, 2004, inventors: Franz X. Zach, Bo Wu, and Abdurrahman Sezinger.
“System and Method for Compensating for Aberrations in a Photolithographic Process,” U.S. Appl. No. 10/841,025, filed May 7, 2004, inventor: Roy V. Prasad.
“System and Method for Reducing Patterning Variability in Integrated Circuit Manufacturing through Mask Layout Corrections,” U.S. Appl. No. 10/841,079, filed May 7, 2004, inventors: Roy V. Prasad, Chi-Song Horng, Ram S. Ramanujam.
“Method and System for Designing Manufacturable Patterns that Account for the Pattern- and Position-Dependent Nature of Patterning Processes,” U.S. Appl. No. 10/861,170, filed Jun. 4, 2004, inventor: Abdurrahman Sezinger.
“Characterizing Flare of a Projection Lens,” U.S. Appl. No. 10/933,090, filed Sep. 1, 2004, inventors: Bo Wu, Abdurrahman Sezginer, Franz X. Zach.
“Method for Correcting Position-Dependent Distortions,” U. S. Appl. No. 10/933,192, filed Aug. 31, 2004, inventors: Devendra Joshi, Abdurrahman Sezginer, Franz X. Zach.
A. K-T Wong, Resolution enhancement techniques in optical lithography, SPIE Press, vol. TT47, Bellingham, WA, pp. 91-115, 2001.
H. J. Levinson, Principles of Lithography, SPIE Press, Bellingham, WA, pp. 257-283 and 771-802, 2001.
Abramowitz, M. and Stegun, I. A. (Eds.), Ch. 22, Handbook of Mathematical Functions with Formulas, Graphs, and Mathematical Tables, 9th printing. New York: Dover, pp. 771-802, 1972.
Born, M. and Wolf, E., Principles of Optics, Ch. 9, 6th ed. New York: Pergamon Press, pp. 459-490 and 523-527, 1989.
C. Bodendorf, et al., Impact of measured pupil illumination fill distribution on lithography simulation and OPC models, Proc. SPIE vol. 5377, Article 110, 2004.
G. McIntyre et al., “Characterizing illumination angular uniformity with phase shifting masks,” Proc. SPIE vol. 5040, Article 16, 2003, SPIE Bellingham WA.
C. Mack, “Inside PROLITH: A Comprehensive Guide to Optical Lithography Simulation,” pp. 67-112, 1997, Finle Technologies, Austin, TX.
Robertson et al., “An Improved Notch Model for Resist Dissolution in Lithography Simulation,” SPIE vol. 4345, 9 pages (undated).
D. G. Flagello, “Theory of high-NA imaging in homogeneous thin films,” Optical Society of America, A, vol. 13, No. 1, 1996.
E. Luce et al., “Flare impact on the intrafield CD control for sub-0.25 um patterning,” SPIE vol. 3679, p. 368-381, Mar. 1999.
Gill, P. R.; Murray, W.; and Wright, M. H. “The Levenberg-Marquardt Method,” §4.7.3 in Pratical Optimization. London: Academic Press, pp. 136-137, 1981.
Golub, G. H. and Van Loan, C. F., Matrix Computations, Sect. 2.5.3 and 2.5.6, 3rd ed. Baltimore, MD: Johns Hopkins University Press, 1996.
Granik, “Dry etch proximity modeling in mask fabrication,” Yuri Publication: Proc. SPIE vol. 5130, p. 86-91, Photomask and Next-Generation Lithography Mask Technology X; Hiroyoshi Tanabe; Ed. (Aug. 2003).
H. Nomura et al., “Higher order aberration measurement with printed patterns under extremely reduced σ illumination,” Proc. SPIE vol. 3679, p. 358-367, SPIE, Bellingham, WA, 1999.
J.P. Kirk et al., “Application of blazed gratings for determination of equivalent primary azimuthal aberrations,” Proc. SPIE vol. 3679, p. 70-76, 1999.
J. P. Cain, “Characterization of Spatial Variation in Photolithography,” M.S. thesis, University of California, Berkeley, 2002.
J.A. Kong, Electromagnetic Wave Theory, John Wiley & Sons, 2nd Ed., pp. 370-403, 1990.
J.M. Geary, Introduction to Wavefront Sensors, vol. TT18, SPIE Optical Engineering Press, Bellingham, WA, pp. 53-103, 1995.
J.P. Kirk, “Scattered light in photolithographic lenses,” Proc SPIE 2197, p. 566-572, SPIE, Bellingham, WA, 1994.
Kirkpatrick, S., C. D. Gelatt Jr., M. P. Vecchi, “Optimization by Simulated Annealing,” Science, 220, No. 4598, pp. 671-680, 1983.
Koza, J. R., “Genetic Programming: On the Programming of Computers by Means of Natural Selection,” Cambridge, MA: MIT Press, 1992.
M. Terry et al., “Behavior of lens aberrations as a function of wavelength on KrF and ArF lithography scanners,” Proc. SPIE vol. 4346, p. 15-24, 2001.
Mark van der Kerkof, et al, “Full optical column characterization of DUV lithographic projection tools,” SPIE 29th Annual International Symposium on MicroLithography, paper 5377, Article 212, Feb. 22-27, 2004, Santa Clara, CA.
Metropolis, N., A. Rosenbluth, A. Teller, E. Teller, “Equation of State Calculations by Fast Computing Machines,” J. Chem. Phys., 21, 6, 1087-1092, 1953.
Nomura, “New Phase shift gratings for measuring aberrations,” Proc. SPIE vol. 4346, p. 25-35, 2001.
P. Dirksen et al., “Determination of resist parameters using the extended Nijboer-Zernike theory,” Proc. SPIE vol. 5377, Article 13, SPIE, Bellingham, 2004.
Press, W. H.; Flannery, B. P.; Teukolsky, S. A.; and Vetterling, W. T. “Interpolation and Extrapolation.” Ch. 3 in Numerical Recipes in FORTRAN: The Art of Scientific Computing, 2nd ed. Cambridge, England: Cambridge University Press, pp. 99-122, 1992.
Schneider et al. “Compensation of long-range process effects on photomasks by design data correction,” Proc. SPIE vol. 5148, p
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