Electronic device using carbon nanotubes

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C977S762000

Reexamination Certificate

active

10762625

ABSTRACT:
An electronic device incorporating a tubular shaped carbon molecule supported by a substrate, which molecule is provided with source and drain electrodes, as well as a gate electrode, wherein the gate electrode is a metallic electrode. The metallic electrode has a surface layer of oxide, preferably native oxide. The metallic electrode is preferably aluminium, zinc and copper.

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patent: WO00/51186 (2000-08-01), None
S.J. Wind. Carbon Nanotube Devices for Future Nenoelectronics. Aug. 2003, pp. 236-239.
Nihey et al., A Top-Gate Carbon-Nanotube Field-Effect Transistor with a Titanium-Dioxide Insulator. Jul. 15, 2002. The Japan Society of Applied Physics, vol. 41 (2202) pp. L 1049-L 1051.
McEuen, P.L., “Carbon-Based Electronics,”Nature, vol. 393, pp. 15-16 (1998).
Martel, R., “Single—and Multi-Wall Carbon Nanotube Field-Effect Transistors,”Applied Physics Ltrs, vol. 73, No. 17, pp. 2447-2449 (Oct. 26, 1998).
Rueckes, T., et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,”Science, vol. 289, pp. 94-97 (Jul. 7, 2000).
Yamada, T., “Analysis of Submicron Carbon Nanotube Field-Effect Transistors,”Applied Physics Ltrs., vol. 76, No. 5, pp. 628-630 (Jan. 31, 2000).

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