Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-09-18
2007-09-18
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C257SE21133
Reexamination Certificate
active
11102765
ABSTRACT:
Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.
REFERENCES:
patent: 5528054 (1996-06-01), Ipposhi et al.
patent: 5707746 (1998-01-01), Yaoi et al.
patent: 5808321 (1998-09-01), Mitanaga
patent: 5830784 (1998-11-01), Zhang et al.
patent: 6013310 (2000-01-01), Yaoi et al.
patent: 6160268 (2000-12-01), Yamazaki
patent: 6197624 (2001-03-01), Yamazaki
patent: 6207969 (2001-03-01), Yamazaki
patent: 6512271 (2003-01-01), Yamazaki
patent: 6562667 (2003-05-01), Hwang et al.
patent: 6570552 (2003-05-01), Yamazaki
patent: 6884665 (2005-04-01), Takahashi
patent: 6900084 (2005-05-01), Yamazaki
patent: 7102165 (2006-09-01), Yamazaki
patent: 2003/0166315 (2003-09-01), Tanada
patent: 5-166839 (1993-07-01), None
patent: 6-196704 (1994-07-01), None
patent: 6-265936 (1994-09-01), None
patent: 11-087731 (1999-03-01), None
patent: 11-87731 (1999-03-01), None
patent: 2001-318626 (2001-11-01), None
patent: 2002-107760 (2002-04-01), None
patent: 2002-107760 (2002-04-01), None
Anya Igwe U.
Baumeister B. William
Foley & Lardner LLP
NEC LCD Technologies Ltd.
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