Method for correcting position-dependent distortions in...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000

Reexamination Certificate

active

10933192

ABSTRACT:
A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.

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van de Kerkhof, Mark, et al., “Full Optical Column Characterization of DUV Lithographic Projection Tools,” SPIE Proc., vol. 5377, p. 1960-1970, SPIE, Bellingham, WA, 2004.

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