Methods for plasma etching of silicon

Details Methods for plasma etching of silicon Methods for plasma etching of silicon

2007-01-23

2007-01-23

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000

Reexamination Certificate

active

09720761

ABSTRACT:
A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.

REFERENCES:
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5047115 (1991-09-01), Charlet et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5182234 (1993-01-01), Meyer
patent: 5302536 (1994-04-01), Josquin
patent: 5389570 (1995-02-01), Shiozawa
patent: 5458734 (1995-10-01), Tsukamoto
patent: 5498312 (1996-03-01), Laermer et al.
patent: 5843847 (1998-12-01), Pu et al.
patent: 5861343 (1999-01-01), Tseng
patent: 6187666 (2001-02-01), Singh et al.
patent: 42 41 045 (1994-05-01), None
patent: 43 17 623 (1994-12-01), None
patent: 197 06 682 (1998-08-01), None
patent: 0 200 951 (1986-11-01), None
patent: 0 414 372 (1991-02-01), None
patent: 0414 372 (1991-02-01), None
patent: 08 134 651 (1996-05-01), None
Flamm, D. et al. “Multiple-Etchant Loading Effets and Silicon Etching in CIF3 and Related Mixtures” Journal of The Electrochemical Society, Dec. 1982, USA, Bd. 129, Nr. 12, pp. 2755-2760.
Flamm, D. et al.: “Multipel-Etchant Loading Effects And Silicon Etching In CIF/sub 3/ And Related Mixtures” Journal of The Electrochemical Society, Dec. 1982, USA, Bd. 129, Nr. 12, pp. 2755-5760.
Patent Abstracts of Japan, vol. 1996, No. 09 (Sep. 30, 1996).

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