Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2007-07-31

2007-07-31

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S216000

Reexamination Certificate

active

11163984

ABSTRACT:
A single-poly non-volatile memory device invented to integrate into logic process is disclosed. This non-volatile memory device includes a memory cell unit comprising a PMOS access transistor that is serially connected to a PMOS storage transistor formed in a cell array area, and, in a peripheral circuit area, a high-voltage MOS transistor having a high-voltage gate insulation layer is provided. The PMOS access transistor has an access gate oxide layer that has a thickness equal to the thickness of the high-voltage gate insulation layer in a peripheral circuit area.

REFERENCES:
patent: 5712178 (1998-01-01), Cho et al.
patent: 6201275 (2001-03-01), Kawasaki et al.
patent: 6709931 (2004-03-01), Kim
patent: 2005/0205939 (2005-09-01), Lee et al.
patent: 2005/0250342 (2005-11-01), Ueda

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