Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-11
2007-09-11
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S068000, C257S071000, C257S309000, C257S905000, C257S070000, C257S300000, C257S305000, C257S907000, C257S906000
Reexamination Certificate
active
11292028
ABSTRACT:
The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative material over the bit node. Sacrificial plugging material is formed within the bit node contact opening between the pair of word lines. Sacrificial plugging material is removed from the bit node contact opening between the pair of word lines, and it is replaced with conductive material that is in electrical connection with the bit node. Thereafter, the conductive material is formed into a bit line.
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Burgess Byron N.
Parekh Kunal R.
Armand Marc-Anthony
Louie Wai-Sing
Wells St. John P.S.
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