Floating-gate field-effect transistors having doped aluminum...

Details Floating-gate field-effect transistors having doped aluminum... Floating-gate field-effect transistors having doped aluminum...

2007-01-02

2007-01-02

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S410000

Reexamination Certificate

active

11213156

ABSTRACT:
Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores of the porous aluminum oxide layer and subsequently converted to a dielectric form. The degree of porosity of the porous aluminum oxide layer may be controlled during formation to facilitate control of the level of doping of the doped aluminum oxide layer. Such doped aluminum oxide layers are useful as gate dielectric layers, intergate dielectric layers and capacitor dielectric layers in various integrated circuit devices.

REFERENCES:
patent: 3583361 (1971-06-01), Laudel, Jr. et al.
patent: 4236994 (1980-12-01), Dugdale
patent: 4566173 (1986-01-01), Gossler et al.
patent: 4814289 (1989-03-01), Baeuerle
patent: 5316982 (1994-05-01), Taniguchi
patent: 5594682 (1997-01-01), Lu et al.
patent: 5633194 (1997-05-01), Selvakumar et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5807613 (1998-09-01), Aguero et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 6240040 (2001-05-01), Akaogi et al.
patent: 2002/0017641 (2002-02-01), Lu et al.
E. B. Brik, Effect of Substrate Temperature on Density of Aluminum Oxide Films, Jan. 1990, Opt. Mekh. Promst. 57,57-59.

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