Method of eliminating residual carbon from flowable oxide fill

Details Method of eliminating residual carbon from flowable oxide fill Method of eliminating residual carbon from flowable oxide fill

2007-04-17

2007-04-17

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S404000, C438S424000, C257SE21277, C257SE21279

Reexamination Certificate

active

10357812

ABSTRACT:
Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems incorporating the oxide material are provided.

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