Method for forming a ruthenium metal layer on a patterned...

Details Method for forming a ruthenium metal layer on a patterned... Method for forming a ruthenium metal layer on a patterned...

2007-09-25

2007-09-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S648000, C438S650000, C257SE21018

Reexamination Certificate

active

10907022

ABSTRACT:
A method for forming a ruthenium metal layer includes providing a patterned substrate in a process chamber of a deposition system, where the patterned substrate contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer on the substrate in an atomic layer deposition process, and depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process. The deposited ruthenium metal layer can be used as a diffusion barrier layer, a seed layer for electroplating, or both.

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European Patent Office, International Search Report and Written Opinion, Aug. 11, 2006, 9 pp.

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