High density plasma chemical vapor deposition process

Details High density plasma chemical vapor deposition process High density plasma chemical vapor deposition process

2007-09-18

2007-09-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S701000, C257SE21002

Reexamination Certificate

active

11315904

ABSTRACT:
A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

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