Passivation processes for use with metallization techniques

Details Passivation processes for use with metallization techniques Passivation processes for use with metallization techniques

2007-03-06

2007-03-06

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S637000

Reexamination Certificate

active

10931355

ABSTRACT:
A method for passivating a substrate, such as a semiconductor substrate, that is to be “metallized,” or on which a metal film or structure is to be formed, includes exposing regions of the substrate that are to be metallized to hydrogen radicals or nitrogen radicals. The regions of the substrate that are treated in this fashion are coated or “stuffed.” Passivation of this type may be effected with a plasma that includes a gas such as argon, nitrogen, helium, or hydrogen, or a mixture of any of the foregoing, which will remove oxygen molecules from the surface to which metal adhesion is desired. The metal may then be formed thereon. Hydrogen radicals may also be used to passivate the surface of a substrate, such as a semiconductor substrate, from spontaneous fluorine etching. Such passivation is, of course, effected in a substantially fluorine free environment.

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