Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-01-23
2007-01-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S355000, C257SE29242, C438S237000
Reexamination Certificate
active
10833773
ABSTRACT:
A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an opposite doping type from that of the drain region and a dopant concentration higher than that of the semiconductor substrate, the reverse doped region and the drain forming a p-n junction.
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Haynes and Boone LLP
Pert Evan
Taiwan Semiconductor Manufacturing Company , Ltd.
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