Methods for forming a conductive structure using oxygen...

Details Methods for forming a conductive structure using oxygen... Methods for forming a conductive structure using oxygen...

2007-09-25

2007-09-25

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE21008, C361S303000

Reexamination Certificate

active

10669384

ABSTRACT:
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g, ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices.

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