Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-03-27
2007-03-27
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S523000
Reexamination Certificate
active
10301624
ABSTRACT:
The object is the present invention is to provide a semiconductor device including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable of realizing high reliability and superior transistor characteristics. The transistors which are desired to have equal characteristics are placed in the semiconductor device so as to have the same STI trench width (the width of shallow trench isolation adjacent to an active in which the transistor is formed). By such composition, stress growing in the active due to the shallow trench isolation is equalized among the transistors and thereby the characteristics of the transistors can be equalized.
Kumagai Yukihiro
Mishima Michihiro
Miura Hideo
Nakanishi Katsuyuki
Ohta Hiroyuki
Abraham Fetsum
Antonelli Terry Stout & Kraus LLP
Renesas Technology Corporation
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