Method for forming a depletion-mode transistor that...

Details Method for forming a depletion-mode transistor that... Method for forming a depletion-mode transistor that...

2006-12-05

2006-12-05

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S547000, C438S264000, C257SE21042, C257SE21043

Reexamination Certificate

active

07144795

ABSTRACT:
A semiconductor circuit with a depletion-mode transistor is formed with a method that eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor. As a result, the method of the present invention reduces the cost and complexity associated with the fabrication of a semiconductor circuit that includes a depletion-mode transistor.

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Richard S. Muller and Theodore I. Kamins, “Device Electronics for Integrated Circuits”, Second Edition, pp. 477-479.

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