Semiconductor substrate having a partial SOI structure,...

Details Semiconductor substrate having a partial SOI structure,... Semiconductor substrate having a partial SOI structure,...

2006-10-17

2006-10-17

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S051000, C257S304000, C257S397000

Reexamination Certificate

active

07122864

ABSTRACT:
A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal silicon layer which is not covered with the insulator, and to cover an edge portion of the insulator adjacent to the region, and a non-single crystal silicon layer formed on the insulator, the interface between the non-single crystal silicon layer and the second single crystal silicon layer being positioned on the insulator.

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