Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Reexamination Certificate
2006-10-10
2006-10-10
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
C257S052000, C257S057000, C257S062000
Reexamination Certificate
active
07119363
ABSTRACT:
A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
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Japanese Office Action dated Jan. 11, 2005 with partial translation.
Satou Yoshinobu
Tanabe Hiroshi
Yuda Katsuhisa
Katten Muchin & Rosenman LLP
NEC Corporation
Pham Long
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