Thin film transistor formed on a transparent substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...

Reexamination Certificate

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Details

C257S052000, C257S057000, C257S062000

Reexamination Certificate

active

07119363

ABSTRACT:
A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.

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Japanese Office Action dated Jan. 11, 2005 with partial translation.

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