Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2006-10-31
2006-10-31
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S261000, C257S296000, C257S512000, C257S555000, C257S562000, C257S697000
Reexamination Certificate
active
07129562
ABSTRACT:
A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell design with smaller, single-height cells for high-density applications. The single-height cells may be used where possible and higher-drive dual-height basic cells where larger transistors are desired. Other multiple height cells may also be included if even more current is desirable. The power rail may include conductors of varying width.
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Breid Duane G.
Colwell Michael J.
Gheewala Tushar R.
Yang Henry H.
Blakely , Sokoloff, Taylor & Zafman LLP
Jr. Carl Whitehead
Mitchell James M.
Virage Logic Corporation
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