Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-10
2006-10-10
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257S290000, C257S291000, C257SE27133, C438S048000, C438S057000
Reexamination Certificate
active
07119387
ABSTRACT:
A solid-state image sensor comprises a semiconductor substrate of a first conductivity type having a color pixel region and a black pixel region; a first well of the first conductivity type formed in the color pixel region; a second well of the first conductivity type formed in the black pixel region; a third well of a second conductivity type formed, surrounding the second well and isolating the second well from the rest region of the semiconductor substrate; a color pixel formed in the first well in the color pixel region and including a first photodiode and a first read transistor for reading a signal generated by the first photodiode; and a black pixel formed in the second well in the black pixel region and including a second photodiode and a second read transistor for reading a signal generated by the second photodiode. The first well includes a first buried impurity doped layer of the first conductivity type formed in a bottom thereof in a region where the first read transistor is formed. The second well includes a second buried impurity doped layer of the first conductivity type formed in a bottom thereof in a region where the second photodiode is formed and a region where the second read transistor is formed.
REFERENCES:
patent: 5781233 (1998-07-01), Liang et al.
patent: 2002-170945 (2002-06-01), None
patent: 2002-329854 (2002-11-01), None
patent: 2004-039832 (2004-02-01), None
Flynn Nathan J.
Fujitsu Limited
Quinto Kevin
Westerman, Hattori, Daniels & Adrian , LLP.
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