Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07129543
ABSTRACT:
A semiconductor device including a transistor having an SOI structure the operating speed of which is not affected is provided. A MOS transistor having the SOI structure is formed which satisfies R·C·f<1 where C is a gate capacitance (F), R is a body resistance (Ω), f is a clock operating frequency (Hz), and f≧500 MHz.
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Maeda Shigenobu
Yamaguchi Yasuo
Crane Sara
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
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