Semiconductor memory device having ferroelectric capacitor...

Details Semiconductor memory device having ferroelectric capacitor... Semiconductor memory device having ferroelectric capacitor...

2006-08-22

2006-08-22

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000

Reexamination Certificate

active

07095068

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6107136 (2000-08-01), Melnick et al.
patent: 6218197 (2001-04-01), Kasai
patent: 6458602 (2002-10-01), Yunogami et al.
patent: 6500677 (2002-12-01), Bergmann et al.
patent: 6521929 (2003-02-01), Ozaki
patent: 10-255483 (1998-09-01), None

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