Thin film semiconductor device, polycrystalline...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S487000, C438S795000

Reexamination Certificate

active

07115454

ABSTRACT:
A process is provided for producing an image display device which includes a thin film semiconductor device. In accordance with the process, semiconductor crystal grains are grown in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and then irradiating the pulsed laser beam on the semiconductor film.

REFERENCES:
patent: 5543351 (1996-08-01), Hirai et al.
patent: 5624860 (1997-04-01), Plumton et al.
patent: 5815494 (1998-09-01), Yamazaki et al.
patent: 6303963 (2001-10-01), Ohtani et al.
patent: 6440824 (2002-08-01), Hayashi et al.
patent: 6451631 (2002-09-01), Grigoropoulos et al.
patent: 6635554 (2003-10-01), Im et al.
patent: 2001/0026835 (2001-10-01), Tanaka
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 2002/0040981 (2002-04-01), Yamazaki et al.
patent: 0043691 (1991-03-01), None
patent: 03068167 (1997-07-01), None
patent: 09181325 (1997-07-01), None
patent: WO 97/45827 (1982-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film semiconductor device, polycrystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film semiconductor device, polycrystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor device, polycrystalline... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3710575

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.