Method of producing a dopant gas species

Details Method of producing a dopant gas species Method of producing a dopant gas species

2006-02-14

2006-02-14

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S42300F, C250S424000, C250S425000, C250S426000, C315S111810, C315S111010, C315S231000

Reexamination Certificate

active

06998626

ABSTRACT:
This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.

REFERENCES:
patent: 4818326 (1989-04-01), Liu et al.
patent: 6540819 (2003-04-01), Tom et al.

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