Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-08-22
2006-08-22
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
Reexamination Certificate
active
07094667
ABSTRACT:
A method for producing wafer splitting from ion implantation into silicon after low temperature direct bonding with surface roughness that is ˜1 nm (RMS). This result is an order of magnitude smoother than the previous work (˜10 nm RMS). The key improvement in this work is the use of a low temperature bond resulting in a strong bond before the material is cut. The smooth as-split surfaces produced using a low temperature bond are very important for creation of very thin (<50 nm) silicon-on-insulator (SOI), three-dimensional bonded structures and nanostructures that are split after processing.
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O'Banion John P.
Pert Evan
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