Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2006-02-07
2006-02-07
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S079000, C257S094000, C257S098000
Reexamination Certificate
active
06995454
ABSTRACT:
A semiconductor optical integrated device1comprises a light-emitting element portion110, modulation element portion120, and separation portion130on a substrate2. Light-emitting element portion110comprises a semiconductor laser element portion, and modulation element portion120comprises a modulation element portion. Separation portion130is formed between light-emitting element portion110and modulation element portion120. In separation portion130, a semiconductor embedded portion80eis provided in a second clad layer8m. Whereas second clad layer8mconsists of p-type InP, semiconductor embedded portion80econsists of n-type InP. Hence semiconductor embedded portion80ehas the effect of impeding the leakage current flowing between electrodes90aand90b. As a result, the leakage current occurring between electrodes90aand90bvia second clad layer8mis reduced.
REFERENCES:
patent: 5721429 (1998-02-01), Radford et al.
patent: 6021148 (2000-02-01), Matsumoto et al.
Masuda Takeyoshi
Murata Michio
McDermott Will & Emery LLP
Nguyen Thanh
Sumitomo Electric Industries Ltd.
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