Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-02-21
2006-02-21
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
Reexamination Certificate
active
07001819
ABSTRACT:
A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.
REFERENCES:
patent: 5233219 (1993-08-01), Shimoji et al.
patent: 5449930 (1995-09-01), Zhou
patent: 5512496 (1996-04-01), Chau et al.
patent: 5700701 (1997-12-01), Hill et al.
patent: 6133594 (2000-10-01), Iwai et al.
“Heterojunction bipolar transistors fo InGaAs system for microwave power amplifier”, OYO-BUTURI, vol. 66, No. 2, (1997), pp. 156-160.
Journal of Vacuum Science and Technology, vol. 18, No. 2, 2000, pp. 761-764.
IEEE Electron Device Letters, vol. 21, No. 9, 2000, pp. 427-429.
Mochizuki Kazuhiro
Ohbu Isao
Oka Tohru
Yamashita Kiichi
Booth Richard A.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
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