Vertical integration of active devices within passive...

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C385S129000, C385S130000

Reexamination Certificate

active

07095938

ABSTRACT:
The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion. As a result, an optical signal portion penetrates the I-layer of the PIN structure and interacts with semiconductor material therein for actively affecting an intensity of the optical signal with no substantial changes in guiding properties of the semiconductor waveguide. Embodiments of invention in the form of monolithically integrated waveguide photodetector, electro-absorptive attenuator and semiconductor optical amplifier are disclosed in terms of detailed epitaxial structure, layout and performance characteristics of the device.

REFERENCES:
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5973339 (1999-10-01), Yokouchi et al.
patent: 5991060 (1999-11-01), Fishman et al.
patent: 6310995 (2001-10-01), Saini et al.
patent: 6330378 (2001-12-01), Forrest et al.
patent: 6381380 (2002-04-01), Forrest et al.
patent: 6479844 (2002-11-01), Taylor
patent: 6498873 (2002-12-01), Chandrasekhar et al.
patent: 6795622 (2004-09-01), Forrest et al.
patent: 0 911 997 (1999-04-01), None
patent: 11145441 (1999-05-01), None
Deri, R.J., et al., “Integrated waveguide/photodiodes using vertical impedance matching”, Appl. Phys. Lett., vol. 56, No. 18, 1737-39, (1990).
Deri et al., “Integrated Waveguide/Photodiodes Using Vertical Impedance Matching”, Applied Physics Letters, American Institute of Physics, vol. 56, No. 18, Apr. 30, 1999, pp 1737-1739.
Deri, “Monolithic Integration of Optical Waveguide Circuitry With III-V Photodetectors for Advanced Lightwave Receivers”, Journal of Lightwave Technology, IEEE, vol. 11, No. 8, Aug. 1, 1993, pp 1296-1313.
Jiang et al., “High-Power Waveguide Integrated Photodiode With Distributed Absorption”, IEEE MTT-S International Microwave Symposium Digest, vol. 2 of 3, Jun. 11, 2000, pp 679-682.
Deri et al., “Efficient Vertical Coupling of Photodiodes to InGaAsP Rib Waveguides”, Applied Physics Letters, American Institute of Physics, vol. 58, No. 24, Jun. 17, 1991, pp2749-2751.
Miller et al., “Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect”, Phyiscal Review Letters, vol. 53, No. 22, Nov. 26, 1984, pp 2173-2176, XP000571007.
Thijs et al., “Progress in Long-Wavelength Strained-Layer InGaAs(P) Quantum-Well Semiconductor Lasers and Amplifiers”, IEEE Journal of Quantum Electronics, vol. 30, No. 2, Feb. 1, 1994, pp 477-498, XP000449499.
Li et al., “Novel Bias Control of Electroabsorption Waveguide Modulator”, IEEE Photonics Technology Letters, vol. 10, No. 5, May 1998, pp 672-674, XP000754655.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vertical integration of active devices within passive... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical integration of active devices within passive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical integration of active devices within passive... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3705126

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.