Single frequency laser

Details Single frequency laser Single frequency laser

2006-08-08

2006-08-08

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S016000, C438S039000, C385S001000, C385S012000, C385S044000, C385S142000

Reexamination Certificate

active

07087448

ABSTRACT:
This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. The ridge (100;101) has at least one defect defining region (104), the at least one defect defining region of the ridge defining a defect in the ridge. The width of the ridge is greater in the at least one defect defining region of the ridge than in adjacent sections of the ridge.

REFERENCES:
patent: 5780320 (1998-07-01), Kinoshita
patent: 5917972 (1999-06-01), Davies

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