Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-10-17
2006-10-17
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07124378
ABSTRACT:
A material estimation apparatus which estimates physical properties of an object including two materials contacting each other by performing a simulation for the object, comprising: a transition area setting part which sets a virtual transition area to a contact portion between the two materials; and a power calculation unit which calculates consumption power due to a contact resistance of the transition area based on potential difference of the transition area.
REFERENCES:
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Apte et al.,“An Integrated Approach for Accurate Simulation and Modeling of the Silicide-Source/Drain Structure and the Silicid Diffusion Contact Resistance”, Dec. 1998, IEDM '98 Technical Digest, International Electron Device Meeting, pp. 729-732.
Brn G. Streetman,“Solid State Electronic Devices”, 2ndedition, 1980, Prentic-Hall, Inc., pp. 136-161.
Bing-Yue Tsui, et al., “Impact of Silicide Formation on the Resistance of Common Source/Drain Region”, IEEE Electron Device Letters, vol. 22, No. 10, Oct. 2001, pp. 463-465.
W. Fichtner, et al.,“TCAD Software for ESD On-Chip Protection Design”, Technical Digest, International Electron Devices Meeting, Dec. 2-5, 2001, (5 pgs.).
Pushkar P. Apte, et al., “An Integrated Approach for Accurate Simulation and Modeling of the Silicide-Source/Drain Structure and the Silicide-Diffusion Contact Resistance”, Technical Digest, International Electron Devices Meeting, Dec. 2-5, 2001, (3 pgs.).
Kabushiki Kaisha Toshiba
Lin Sun James
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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