Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257S351000, C438S199000
Reexamination Certificate
active
07064396
ABSTRACT:
An integrated circuit with both P-channel transistors (823) and N-channel transistors (821) with different spacer insulating region widths. In one example, the outer sidewall spacer (321) of the N-channel transistors is removed while the P-channel regions (115) are masked such that the spacer insulating region widths of the N-channel transistors is less than the spacer insulating region widths of the P-channel transistors. Also, the drain/source silicide regions (805) of the N-channel transistors are located closer to the gates (117) of those transistors than the P-channel source/drain suicide regions (809) are located to the gates (119) of those transistors. Providing the P-channel transistors with greater spacer insulating widths and greater distances between the source/drain silicide regions and gates may increase the relative compressive stress of the channel region of the P-channel transistors relative the stress of the channel region of the N-channel transistors, thereby increasing the performance of the P-channel transistors.
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Adams Vance H.
Chen Jian
Yeap Choh-Fei
Clingan, Jr. James I.
Dolezal David G.
Freescale Semiconductor Inc.
Ho Tu-Tu
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