Method of operating a stacked spin based memory

Details Method of operating a stacked spin based memory Method of operating a stacked spin based memory

2006-06-20

2006-06-20

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S170000, C365S173000

Reexamination Certificate

active

07064976

ABSTRACT:
A method of operating a spin based memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.

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