Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-05
2006-12-05
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257SE31063
Reexamination Certificate
active
07145208
ABSTRACT:
A MOS transistor including a substrate, a gate dielectric layer on the substrate, a stacked gate on the gate dielectric layer, and a source/drain in the substrate beside the stacked gate is provided. In particular, the stacked gate includes, from bottom to top, a first barrier layer, an interlayer, a work-function-dominating layer, a second barrier layer and a poly-Si layer, wherein the work-function-dominating layer includes a metallic material.
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Chiang Wen-Tai
Hsieh Yi-Sheng
Lin Wei-Min
Shiau Wei-Tsun
Yang Chih-Wei
Jianq Chyun IP Office
Le Dung A.
United Microelectronics Corp.
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