Method for fabricating semiconductor components by forming...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S672000, C257S621000

Reexamination Certificate

active

06998344

ABSTRACT:
An interconnect for semiconductor components such as dice, wafers and chip scale packages is provided. The interconnect includes a substrate, and patterns of contacts formed on a face side of the substrate adapted to electrically engage external contacts (e.g., bond pads, solder bumps) on the components. The interconnect also includes insulated conductive members through the substrate, which provide direct electrical paths from the interconnect contacts to a backside of the substrate. The conductive members can be formed by laser machining openings in the substrate, and then filling the openings with a conductive material (e.g., metal, conductive polymer). The conductive members can also include pads with contact balls, configured for electrical interface with a test apparatus, such as test carrier or wafer handler. The interconnect can be used to construct test systems for testing semiconductor components, or to construct chip scale packages and multi chip modules.

REFERENCES:
patent: 4617730 (1986-10-01), Geldermans et al.
patent: 4622058 (1986-11-01), Leary-Renick et al.
patent: 4830264 (1989-05-01), Bitaillou et al.
patent: 4954313 (1990-09-01), Lynch
patent: 5046239 (1991-09-01), Miller
patent: 5063177 (1991-11-01), Geller et al.
patent: 5166097 (1992-11-01), Tanielian
patent: 5172050 (1992-12-01), Swapp
patent: 5222014 (1993-06-01), Lin
patent: 5229647 (1993-07-01), Gnadinger
patent: 5236551 (1993-08-01), Pan
patent: 5249450 (1993-10-01), Wood et al.
patent: 5277787 (1994-01-01), Otani et al.
patent: 5404044 (1995-04-01), Booth et al.
patent: 5420520 (1995-05-01), Anschel et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5432999 (1995-07-01), Capps et al.
patent: 5435480 (1995-07-01), Hart et al.
patent: 5473120 (1995-12-01), Ito et al.
patent: 5474458 (1995-12-01), Vafi et al.
patent: 5481795 (1996-01-01), Hatakeyama et al.
patent: 5483741 (1996-01-01), Akram et al.
patent: 5484647 (1996-01-01), Nakatani et al.
patent: 5487218 (1996-01-01), Bhatt et al.
patent: 5487999 (1996-01-01), Farnworth
patent: 5493096 (1996-02-01), Koh
patent: 5528080 (1996-06-01), Goldstein
patent: 5541525 (1996-07-01), Wood et al.
patent: 5557844 (1996-09-01), Bhatt et al.
patent: 5578526 (1996-11-01), Akram et al.
patent: 5592736 (1997-01-01), Akram et al.
patent: 5599744 (1997-02-01), Koh et al.
patent: 5607818 (1997-03-01), Akram et al.
patent: 5633122 (1997-05-01), Tuttle
patent: 5634267 (1997-06-01), Farnworth et al.
patent: 5640051 (1997-06-01), Tomura et al.
patent: 5674785 (1997-10-01), Akram et al.
patent: 5686317 (1997-11-01), Akram et al.
patent: 5716218 (1998-02-01), Farnworth et al.
patent: 5739585 (1998-04-01), Akram et al.
patent: 5780143 (1998-07-01), Shimamoto et al.
patent: 5781022 (1998-07-01), Wood et al.
patent: 5783461 (1998-07-01), Hembree
patent: 5783865 (1998-07-01), Higashiguchi et al.
patent: 5796590 (1998-08-01), Klein
patent: 5801452 (1998-09-01), Farnworth et al.
patent: 5815000 (1998-09-01), Farnworth et al.
patent: 5834848 (1998-11-01), Iwasaki
patent: 5834945 (1998-11-01), Akram
patent: 5869974 (1999-02-01), Akram et al.
patent: 5870289 (1999-02-01), Tokuda et al.
patent: 5874043 (1999-02-01), Sarkhel et al.
patent: 5876580 (1999-03-01), Lykins
patent: 5878485 (1999-03-01), Wood et al.
patent: 5896036 (1999-04-01), Wood et al.
patent: 5915977 (1999-06-01), Hembree et al.
patent: 5929647 (1999-07-01), Akram et al.
patent: 5931685 (1999-08-01), Hembree et al.
patent: 5936847 (1999-08-01), Kazle
patent: 5952840 (1999-09-01), Farnworth et al.
patent: 5959840 (1999-09-01), Collins et al.
patent: 5960251 (1999-09-01), Brusic et al.
patent: 5962921 (1999-10-01), Farnworth et al.
patent: 6013948 (2000-01-01), Akram et al.
patent: 6040702 (2000-03-01), Hembree et al.
patent: 6082605 (2000-07-01), Farnworth
patent: 6107109 (2000-08-01), Akram et al.
patent: 6107119 (2000-08-01), Farnworth et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6119338 (2000-09-01), Wang et al.
patent: 6162997 (2000-12-01), Memis
patent: 6236115 (2001-05-01), Gaynes et al.
patent: 6294837 (2001-09-01), Akram et al.
patent: 6353328 (2002-03-01), Akram et al.
patent: 6356098 (2002-03-01), Akram et al.
patent: 6362637 (2002-03-01), Farnworth et al.
patent: 6372624 (2002-04-01), Farnworth et al.
patent: 6400172 (2002-06-01), Akram et al.
patent: 6417685 (2002-07-01), Akram et al.
patent: 6437591 (2002-08-01), Farnworth et al.
patent: 6451624 (2002-09-01), Farnworth et al.
patent: 6589594 (2003-07-01), Hembree
patent: 6620731 (2003-09-01), Farnworth et al.
patent: 6637638 (2003-10-01), Farnworth et al.
patent: 6833613 (2004-12-01), Akram et al.
patent: 6903443 (2005-06-01), Farnworth et al.
T. R. Anthony. “Forming Electrical Interconnections Through Semiconductor Wafers”, American Institute of Physics, 1981, pp. 5340-5349.

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