Semiconductor wafer dividing method and apparatus

Details Semiconductor wafer dividing method and apparatus Semiconductor wafer dividing method and apparatus

2006-11-14

2006-11-14

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S113000, C438S462000, C438S463000

Reexamination Certificate

active

07135384

ABSTRACT:
A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.

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Iljima, T. et al., “Semiconductor Device Obtained by Dividing Semiconductor Wafer by Use of Lase Dicing Technique and Method of Manufacturing the Same”, U.S. Appl. No. 10/418,274, filed Apr. 18, 2003.
Official Action from the State Intellectual Property Office of the People's Republic of China dated Sep. 16, 2005, and English language translation of same.

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