Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2006-08-15
2006-08-15
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S230050
Reexamination Certificate
active
07092281
ABSTRACT:
A voltage supplied to an SRAM (static random access memory) in an electronic system is controlled responsive a level of activity in the electronic system. If the level of activity is higher, the voltage is kept lower; if the level of activity, the voltage is increased, reducing soft error rate in the SRAM. For example, one indicator of the level of activity is how frequently the SRAM is accessed. If the SRAM is accessed less frequently, a higher voltage value is used to supply the SRAM than if the SRAM is accessed more frequently. A higher voltage provides a lower soft error rate (SER), but increases power dissipation. The SRAM dissipates less switching power when it is infrequently used and therefore a higher voltage value can be supplied to the SRAM during such times of infrequent use without causing excessive power dissipation by the electronic system.
REFERENCES:
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patent: 5303190 (1994-04-01), Pelley, III
patent: 5523966 (1996-06-01), Idei et al.
patent: 6026011 (2000-02-01), Zhang
patent: 6510076 (2003-01-01), Lapadat et al.
Aipperspach Anthony Gus
Allen David Howard
International Business Machines - Corporation
Phung Anh
Williams Robert R.
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