Process for forming a diffusion barrier material nitride film

Details Process for forming a diffusion barrier material nitride film Process for forming a diffusion barrier material nitride film

2006-02-14

2006-02-14

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S655000

Reexamination Certificate

active

06998341

ABSTRACT:
A process is disclosed for manufacturing a film that is smooth and has large nitride grains of a diffusion barrier material. Under the process, a nitride of the diffusion barrier material is deposited by physical vapor deposition in an environment of nitrogen. The nitrogen content of the environment is selected at an operating level such that nitride nuclei of the diffusion barrier material are evenly distributed. A grain growth step is then conducted in the nitrogen environment to grow a film of large nitride grains of the diffusion barrier material. Also disclosed is a stack structure suitable for MOS memory circuits incorporating a lightly nitrided refractory metal silicide diffusion barrier with a covering of a nitride of a diffusion barrier material. The stack structure is formed in accordance with the diffusion barrier material nitride film manufacturing process and exhibits high thermal stability, low resistivity, long range agglomeration blocking, and high surface smoothness.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4847111 (1989-07-01), Chow et al.
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4927505 (1990-05-01), Sharma et al.
patent: 4976839 (1990-12-01), Inoue
patent: 5075251 (1991-12-01), Torres et al.
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5188979 (1993-02-01), Filipiak
patent: 5286676 (1994-02-01), Kruger et al.
patent: 5318924 (1994-06-01), Lin et al.
patent: 5631479 (1997-05-01), Shiga
patent: 5633200 (1997-05-01), Hu
patent: 5665209 (1997-09-01), Byun
patent: 5688718 (1997-11-01), Shue
patent: 5776823 (1998-07-01), Agnello et al.
patent: 6080657 (2000-06-01), Liu et al.
patent: 6472264 (2002-10-01), Agarwal
patent: 6489194 (2002-12-01), Agarwal
patent: 6689685 (2004-02-01), Hu
patent: 3-11735 (1991-01-01), None
patent: 5-347274 (1993-12-01), None
Lin J. et al.,Aluminum Contact Filling and Planarization With Pulsed Laser, Materials Research Society, Conference Proceedings ULSI-VII, pp. 535-540, 1992.
Shingubara S. et al,Submicron Hole Filling Characteristics Employing ECR A1 Sputtering with High Magnetic Field, Materials Research Society, Conference Proceedings ULSI-VIII, p. 257-266, 1993.
Joshi R.V. et al.,Collimated Sputtering for Refractory Metal Liners for Sub-Half Micron Technology, Materials Research Society, Conference Proceedings ULSI-VIII, pp. 273-279, 1993.
Hsieh J. J. et al.,Collimated Liners: Process Modeling and Material Characteristics, Materials Research Society, Conference Proceedings ULSI-IX, pp. 207-213, 1994.
Ramaswami S. et al.,Development of a Coherent Ti/TiN Process for Sub-Half Micron Technologies, Materials Research Society, Conference Proceedings ULSI-IX, pp. 215-221, 1994.
Wolf, S., “Silicon Processing for the VLSI Era,” vol. 2, Lattice Press, 1990, pp. 147-150.

Affiliated with

Also associated with

Rating

Process for forming a diffusion barrier material nitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming a diffusion barrier material nitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a diffusion barrier material nitride film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3697686