Lateral low-side and high-side high-voltage devices

Details Lateral low-side and high-side high-voltage devices Lateral low-side and high-side high-voltage devices

2006-02-14

2006-02-14

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S327000, C257S335000, C257S341000

Reexamination Certificate

active

06998681

ABSTRACT:
Lateral high-side and low-side high-voltage devices with low specific on-resistances are made in a first and in a second surface voltage-sustaining region, respectively. In the on-state of high-side MOST (the right portion of the figure), the voltage across its source and its drain is very low and only layer5(p-type) is depleted to a large extent, layer6and layer7remain neutral and can serve as drift region(s) of electrons and/or holes. The drift region can be used for a single n-MOST or p-MOST, or even a parallel connection of n-MOST and p-MOST as shown in the figure. In the off-state of the high-side MOST, the voltage across its source and its drain is very large, but the voltage across its drain and the substrate1can be very low, and all of the layers in the first surface voltage-sustaining region are depleted, the depleted layer5produces an optimum variation lateral density of charge.The low-side MOST (the left portion of the figure) is similar to the high-side MOST.

REFERENCES:
patent: 5726469 (1998-03-01), Chen
patent: 6245609 (2001-06-01), Tsai et al.
patent: 6310365 (2001-10-01), Chen
X.B. Chen, et al. “Theory of Optimum Design of Reverse-Biased p-n Junctions Using Resistive Filed Plates and Variation Lateral Doping” Solid-State Electronics, (1992) vol. 35, No. 9, pp. 1365-1370.
X.B. Chen, et al. “Lateral High-Voltage Devices Using an Optimized Variational Lateral Doping” Int. J. Electronics, (1996) vol. 80, No. 3, pp. 449-459.

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