Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-07
2006-11-07
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S310000, C257S296000, C438S253000, C438S396000, C438S508000
Reexamination Certificate
active
07132709
ABSTRACT:
A capacitor11made up of a lower electrode8,a capacitive insulating film9of an insulating metal oxide and an upper electrode10is formed over a semiconductor substrate1.A first-layer wire14is formed on a passivation film12that covers the capacitor11.A first interlevel dielectric film15is deposited to cover the first-layer wire14.A second interlevel dielectric film17is deposited over the first interlevel dielectric film15with a barrier film16,which overlaps the capacitor11for preventing hydrogen from diffusing, interposed therebetween. A second-layer wire19is formed on the second interlevel dielectric film17.The first interlevel dielectric film15has a hydrogen content lower than that of the second interlevel dielectric film17.
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Tetsuro Tamura et al., “Kyo-Yudentai Capacitor No Process Rekka”, Denshi Joho Tsushin Gakkai Ronbunshi C, Jan. 2000, vol. J83-C, No. 1, pp. 53-59.
Fujii Eiji
Imanishi Sadayuki
Ito Toyoji
Nagano Yoshihisa
Le Dung A.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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