Method of forming metal line in semiconductor device

Details Method of forming metal line in semiconductor device Method of forming metal line in semiconductor device

2006-12-12

2006-12-12

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S692000

Reexamination Certificate

active

07148137

ABSTRACT:
A method of forming a metal line in a semiconductor device. The method includes forming an insulating interlayer over a substrate provided with a lower metal line, and forming a hole exposing the lower metal line. The method also includes forming a first metal layer on the insulating interlayer including an inside of the hole and the lower metal line, forming a conductor layer on the first metal layer to fill the hole, and etching back the conductor layer to form a plug until the first metal layer is exposed. The method further includes stacking a second metal layer and a third metal layer on the first metal layer, and patterning the second metal layer, the third metal layer, and the first metal layer to form an upper metal line overlapped with the plug using an etch mask defining the upper metal line.

REFERENCES:
patent: 5874358 (1999-02-01), Myers et al.
patent: 6133142 (2000-10-01), Tran et al.
patent: 6274475 (2001-08-01), Shields
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6350665 (2002-02-01), Jin et al.
patent: 6376325 (2002-04-01), Koo

Affiliated with

Also associated with

Rating

Method of forming metal line in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal line in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal line in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3695569