Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-06-06
2006-06-06
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S209000
Reexamination Certificate
active
07057925
ABSTRACT:
In read operation, a current from a current supply transistor flows through a selected memory cell and a data line. Moreover, a bias magnetic field having such a level that does not destroy storage data is applied to the selected memory cell. By application of the bias magnetic field, an electric resistance of the selected memory cell changes in the positive or negative direction depending on the storage data level. A sense amplifier amplifies the difference between voltages on the data line before and after the change in electric resistance of the selected memory cell. Data is thus read from the selected memory cell by merely accessing the selected memory cell. Moreover, since the data line and the sense amplifier are insulated from each other by a capacitor, the sense amplifier can be operated in an optimal input voltage range regardless of magnetization characteristics of the memory cells.
REFERENCES:
patent: 6055178 (2000-04-01), Naji
patent: 6185143 (2001-02-01), Perner et al.
patent: 6205075 (2001-03-01), Nomura
patent: 6317376 (2001-11-01), Tran et al.
patent: 6501679 (2002-12-01), Hidaka
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
M. Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
Related U.S. Appl. No. 10/164,548, filed Jun. 10, 2002.
Hidaka Hideto
Ooishi Tsukasa
Ho Hoai
Renesas Technology Corp.
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