Semiconductor memory devices having extending contact pads...

Details Semiconductor memory devices having extending contact pads... Semiconductor memory devices having extending contact pads...

2006-12-05

2006-12-05

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S250000, C438S256000, C438S399000

Reexamination Certificate

active

07144798

ABSTRACT:
An integrated circuit device having a semiconductor substrate includes a gate structure on the semiconductor substrate. Source/drain regions are on opposite sides of the gate structure. A contact pad is on at least one of the source/drain region, and a silicide cap is on a surface of the contact pad opposite the respective source/drain region.

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Notice of Office Action, Korean Application No. 10-2002-0046573, May 28, 2004.

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