Method of fabricating a p-type CaO-doped SrCu 2 O 2 thin film

Details Method of fabricating a p-type CaO-doped SrCu 2 O 2 thin film Method of fabricating a p-type CaO-doped SrCu 2 O 2 thin film

Filed on

2006-08-08

Date issued

2006-08-08

Examiner

Hoang, Quoc (Department: 2818)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C438S782000, C438S508000, C257S079000

Type

Reexamination Certificate

Status

active

Patent number

07087526

Description

ABSTRACT:
A method of CaO-doped SrCu2O2spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu2O2precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu2O2layer thereon.

REFERENCES:
patent: 6914268 (2005-07-01), Shei et al.
Ohta et al.,Fabrication and Current Injection UV-light Emission from a transparent p-n Heterojunction Composed of p-SrCu2O2and n-ZnO, Key Engineering Materials, vol. 214-215 pp. 75-80 (2002).
Martinson,Synthesis of Single Phase SrCu2O2from liquid precursors, Journal of Young Investigators, vol. 10, Issue 3, Mar. 2004.
Nie et al.,First-principles study of transparent p-type conductive SrCu2O2and related compounds, Physical Review B, vol. 65, 2002, pp. 075111.

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