Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S344000, C257S412000
Reexamination Certificate
active
07005710
ABSTRACT:
A transistor structure includes an insulated conductive gate spacer or a conductive layer under a nonconductive spacer, together forming a composite spacer, which is contacted and driven separately from the conventional gate of the transistor. The gate spacer, conductive layer of a composite spacer or a portion or portions thereof serve as a control or controls for the transistors taking the form of a second gate or second and third gates for the transistors. The transistors may be used throughout an integrated circuit or it may be preferred to use the improved transistor only in critical speed paths of an integrated circuit. Delays within circuits including the improved transistors are reduced since the drain voltage can be higher than VCC and the BVDSS and subthreshold voltage are substantially higher than standard LDD transistors. When the improved transistors are used selectively within an integrated circuit, the remaining devices can be structured as standard LDD transistors, using the gate spacers in a conventional manner, and/or as conventional transistors.
REFERENCES:
patent: 4213139 (1980-07-01), Rao
patent: 4319263 (1982-03-01), Rao
patent: 4472821 (1984-09-01), Mazin et al.
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5115288 (1992-05-01), Manley
patent: 5250450 (1993-10-01), Lee et al.
patent: 5252504 (1993-10-01), Lowrey et al.
patent: 5257238 (1993-10-01), Lee et al.
patent: 5292681 (1994-03-01), Lee et al.
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 5397727 (1995-03-01), Lee et al.
patent: 5425392 (1995-06-01), Thakur et al.
patent: 5439835 (1995-08-01), Gonzalez
patent: 5495441 (1996-02-01), Hong
patent: 5513137 (1996-04-01), Lee et al.
patent: 5600168 (1997-02-01), Lee
patent: 5714786 (1998-02-01), Gonzalez et al.
patent: 6005273 (1999-12-01), Gonzalez et al.
Tiao-yuan Huang, William W. Yao, Russel A. Martin, Alan G. Lewis, Mitsumasa Koyanagi, & John Y Chen, A Novel Submicron LDD Transistor with Inverse-T Gate Structure, IDEM 1986, pp. 742-745.
I.C. Chen, J. P. Lin, and C. W. Teng, Article from 1990 Symposium on VLSI Technology entitled: “A Highly Reliable 0.3 u N-channel MOSFET Using Poly Spacers”, pp. 39-40.
Masataka Minami, Yasuo Sawahata, Hiroshi Matsuki and Takahiro Nagano, Article from 1990 Symposium on VLSI Technology entitled: A High Speed & High Reality MOFSET Utilizing an Auxiliary Gate, p. 41-42.
F.-C. Hsu and K.-Y. Chiu, Article from IEEE Electron Device Letters, vol. EDL-5, No. 5, entitled: “Evaluation of LDD MOSFET's Based on Hot-Electron-Induced Degradation”, May 1984, pp. 162-165.
Gonzalez Fernando
Kao David
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
Munson Gene M.
LandOfFree
Transistors having controlled conductive spacers, uses of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistors having controlled conductive spacers, uses of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors having controlled conductive spacers, uses of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3688217