Process for forming an ultra fine pattern using a bottom...

Details Process for forming an ultra fine pattern using a bottom... Process for forming an ultra fine pattern using a bottom...

2006-11-21

2006-11-21

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S313000, C430S950000

Reexamination Certificate

active

07138218

ABSTRACT:
A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

REFERENCES:
patent: 6355400 (2002-03-01), Tanaka et al.
patent: 6461776 (2002-10-01), Tanaka et al.
patent: 6610808 (2003-08-01), De et al.
patent: 6627384 (2003-09-01), Kim et al.

Affiliated with

Also associated with

Rating

Process for forming an ultra fine pattern using a bottom... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming an ultra fine pattern using a bottom..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming an ultra fine pattern using a bottom... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3687447