Method of forming a semi-insulating region

Details Method of forming a semi-insulating region Method of forming a semi-insulating region

2006-02-28

2006-02-28

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S949000, C438S480000, C438S528000

Reexamination Certificate

active

07005363

ABSTRACT:
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.

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