Method for protecting the redistribution layer on wafers/chips

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S612000, C438S613000, C438S508000

Reexamination Certificate

active

07115496

ABSTRACT:
The invention relates to a method for protecting the redistribution layer on wafers/chips, which preferably comprises a structure constructed from a seed layer, a layer of copper situated on the seed layer, a nickel layer arranged thereon, and a gold layer covering the latter. The wafer (4) provided with the redistribution layer (1) is covered on its entire surface with an organic protective layer (12), e.g., made of BTA (benzotriazole), Glicoat or Preventol®, which protects the redistribution layer (1) from corrosion and oxidation in that it produces a dense covering of the metal surface of the redistribution layer (1) through chemical bonding.

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patent: 2002/0177308 (2002-11-01), Chen et al.
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patent: 0 437 979 (1991-07-01), None
patent: 06-084917 (1994-03-01), None
patent: 11-003 892 (1999-01-01), None

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