Method for controlling the properties of DARC and...

Details Method for controlling the properties of DARC and... Method for controlling the properties of DARC and...

2006-12-05

2006-12-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S784000

Reexamination Certificate

active

07144824

ABSTRACT:
A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.

REFERENCES:
patent: 6218314 (2001-04-01), Lin
patent: 6566186 (2003-05-01), Allman et al.
patent: 6924191 (2005-08-01), Liu et al.

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