Transistor with doped gate dielectric

Details Transistor with doped gate dielectric Transistor with doped gate dielectric

2006-02-21

2006-02-21

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000, C257S410000, C257S411000, C257S412000

Reexamination Certificate

active

07002224

ABSTRACT:
A transistor and method of manufacture thereof. A semiconductor workpiece is doped before depositing a gate dielectric material. Using a separate anneal process or during subsequent anneal processes used to manufacture the transistor, dopant species from the doped region of the workpiece are outdiffused into the gate dielectric, creating a doped gate dielectric. The dopant species fill vacancies in the atomic structure of the gate dielectric, resulting in a transistor having increased speed, reduced power consumption, and improved voltage stability.

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