Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2006-08-08
2006-08-08
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S201000
Reexamination Certificate
active
07087941
ABSTRACT:
The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
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Current Voltage Characteristics of pp-Isotype InGaAIP/GaAs Heterojunction with a Large Valence-Band discontinuity; By Kazuhiko Itaya, Masayuki Ishikawa, Gen-ichi Hatakoshi, Jpn. J. Appl. Phys. vol. 32 (1993) Pt. 1, No. 5A (pp. 1919-1922).
Chui Herman C.
Gardner Nathan F.
Hofler Gloria E.
Kish Fred A.
Kocot Christopher
Patent Law Group LLP
Pham Long
Philips Lumileds Lighting Company LLC
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